| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 7 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 100 @10mA, 10V |
| Input Power (Max) | 7 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 7000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The KSA1381ESTU is a PNP general purpose Epitaxial Silicon Transistor offers -300V low base voltage and -100mA collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.
● High voltage
● 2.3pF at -30V VCB Low reverse transfer capacitance
● Excellent gain linearity for low THD
● 150MHz High frequency
● Complementary to KSC3503
ON Semiconductor
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