| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 120 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 160 @500mA, 2V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 8 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 30V 2A 120MHz 1W Through Hole TO-92-3
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