TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 800 mW |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 120 @50mA, 2V |
Input Power (Max) | 800 mW |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3
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