TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 80 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 400 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 70 @2mA, 6V |
Input Power (Max) | 400 mW |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 400 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | 150℃ (TJ) |
The KSC1815YTA is a NPN Epitaxial Silicon Transistor offers 60V collector base voltage and 150mA collector current. It is suitable for audio frequency amplifier and high-frequency OSC applications.
● Complement to KSA1015
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