TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 300 V |
Current Rating | 100 mA |
Case/Package | TO-126-3 |
Polarity | NPN |
Power Dissipation | 7 W |
Breakdown Voltage (Collector to Emitter) | 300 V |
Continuous Collector Current | 0.1A |
hFE Min | 40 @10mA, 10V |
hFE Max | 320 |
Input Power (Max) | 7 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 8 mm |
Size-Width | 3.25 mm |
Size-Height | 11 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild
6 Pages / 0.14 MByte
Fairchild
7 Pages / 0.19 MByte
Samsung
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ON Semiconductor
NPN Epitaxial Silicon Transistor, 1920-TUBE
ON Semiconductor
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Bag
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Rail
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
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