| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 7 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 40 @10mA, 10V |
| Input Power (Max) | 7 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 7000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The KSC3503DSTU is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.
● High voltage
● 1.8pF at 30V VCB Low reverse transfer capacitance
● Excellent gain linearity for low THD
● 150MHz High frequency
● Complementary to KSC1381
ON Semiconductor
6 Pages / 0.14 MByte
ON Semiconductor
7 Pages / 0.23 MByte
Samsung
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ON Semiconductor
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Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Bulk
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Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Rail
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Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
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Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
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