| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 11 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 2.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Continuous Collector Current | 2A |
| hFE Min | 4 @1A, 1V |
| Input Power (Max) | 50 W |
| DC Current Gain (hFE) | 28 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | 150℃ (TJ) |
The KSC5502DTM is a NPN triple diffused planar Silicon Transistor offers 1200V collector base voltage and 2A collector current. It is suitable for high voltage power switch switching applications.
● Wide safe operating area
● Built-in free-wheeling diode
● Small variance in storage time
● Suitable for electronic ballast application
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