| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 100 W |
| Breakdown Voltage (Collector to Emitter) | 800 V |
| hFE Min | 20 @400mA, 3V |
| Input Power (Max) | 100 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 800V 3A 5MHz 100W Through Hole TO-220-3
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