TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 150 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 250 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 0.15A |
hFE Min | 200 @1mA, 6V |
Input Power (Max) | 250 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | 150℃ (TJ) |
The KSC945CGBU is a NPN Epitaxial Silicon Transistor offers 60V collector base voltage and 150mA collector current. It is suitable for audio frequency amplifier and high-frequency OSC applications.
● Complement to KSA733
● High current gain bandwidth product
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