TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 0.25 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 200 @1mA, 6V |
Input Power (Max) | 250 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 250mW Through Hole TO-92-3
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