| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.67 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 60 @2A, 1V |
| Input Power (Max) | 1.67 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail |
| Material | Silicon |
| Size-Length | 9.9 mm |
| Size-Width | 4.5 mm |
| Size-Height | 9.2 mm |
| Operating Temperature | 150℃ (TJ) |
The KSE44H11TU is a NPN Epitaxial Silicon Transistor offers 30V collector base voltage and 10A collector current. It is suitable for general purpose power switching applications.
● 1V VCE (sat) @ 8A Maximum low collector-emitter saturation voltage
● Fast switching speeds
● Complement to KSE45H
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