| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Power Dissipation | 40000 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 750 @1.5A, 3V |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Size-Height | 11.2 mm |
| Operating Temperature | 150℃ (TJ) |
Fairchild
4 Pages / 0.05 MByte
Fairchild
6 Pages / 0.15 MByte
Fairchild
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Samsung
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Fairchild
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans Darlington NPN 60V 4A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans Darlington NPN 60V 4A 3Pin(3+Tab) TO-126 Rail
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