TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-126-3 |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 750 @1.5A, 3V |
Input Power (Max) | 40 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 40000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3
ON Semiconductor
6 Pages / 0.15 MByte
Fairchild
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Samsung
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Fairchild
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans Darlington NPN 60V 4A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans Darlington NPN 60V 4A 3Pin(3+Tab) TO-126 Rail
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.