| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Dissipation | 0.35 W |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| hFE Min | 60 |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.96 mm |
Features
●---
● |
● VHF / UHF Transistor
ON Semiconductor
5 Pages / 0.24 MByte
ON Semiconductor
10 Pages / 0.74 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
NPN Epitaxial Silicon Transistor
Samsung
General Purpose Applications, 30V, 25mA, 330m W, B> 60, >650mH z
Fairchild
NPN Epitaxial Silicon Transistor
Fairchild
Trans RF BJT NPN 25V 350mW 3Pin SOT-23 T/R
ON Semiconductor
Trans RF BJT NPN 25V 350mW 3Pin SOT-23 T/R
Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
