| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 350 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 350 mW |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.97 mm |
The KST2907AMTF is a PNP Epitaxial Silicon Transistor offers -60V collector base voltage and 600mA collector current.
● General purpose transistor
ON Semiconductor
21 Pages / 0.42 MByte
ON Semiconductor
10 Pages / 0.63 MByte
ON Semiconductor
1 Pages / 0.04 MByte
Fairchild
Pnp Epitaxial Silicon Transistor
ON Semiconductor
PNP Epitaxial Silicon Transistor, 3000-REEL
Samsung
General Purpose Applications, 40V, 600mA, 350mW, B> 75, >200M Hz
Fairchild
Trans GP BJT PNP 60V 0.6A 3Pin SOT-23 T/R
ON Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin SOT-23 T/R
Samsung
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 200MHz
Fairchild
SMALL SIGNAL BIPOLAR TRANSISTOR
Fairchild
PNP Epitaxial Silicon Transistor
Fairchild
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
