| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 0.4 MHz |
| Number of Pins | 8 Pin |
| Case/Package | DIP-8 |
| Rise/Fall Time | 50ns, 30ns |
| Number of Outputs | 2 Output |
| Output Voltage | 580 V |
| Power Dissipation | 750 mW |
| Rise Time | 50 ns |
| Output Current (Max) | 0.65 A |
| Fall Time | 30 ns |
| Fall Time (Max) | 30 ns |
| Fall Time (Max) | 50 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -45 ℃ |
| Power Dissipation (Max) | 750 mW |
| Supply Voltage | 8V ~ 16.6V |
| Supply Voltage (Max) | 16.6 V |
| Supply Voltage (Min) | 14.6 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.92 mm |
| Size-Width | 6.6 mm |
| Size-Height | 3.32 mm |
| Operating Temperature | -45℃ ~ 125℃ |
Description
●The L6384E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices. Matched delays between Low and High Side Section simplify high frequency operation. Dead time setting can be readily accomplished by means of an external resistor.
●Features
●■ High voltage rail up to 600V
●■ dV/dt immunity ±50V/nsec in full temperature range
●■ Driver current capability:
●– 400mA source,
●– 650mA sink
●■ Switching times 50/30 nsec rise/fall with 1nF load
●■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
●■ Shut down input
●■ Dead time setting
●■ Under voltage lock out
●■ Integrated bootstrap diode
●■ Clamping on VCC
●■ SO-8/DIP-8 packages
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