L6385ED013TR Datasheet PDF - ST Microelectronics

Description

●The L6385E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

●Features

●■ High voltage rail up to 600V

●■ dV/dt immunity ±50V/nsec in full temperature range

●■ Driver current capability:

●– 400mA source,

●– 650mA sink

●■ Switching times 50/30 nsec rise/fall with 1nF load

●■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down

●■ Under voltage lock out on lower and upper driving section

●■ Internal bootstrap diode

●■ Outputs in phase with inputs