| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 0.4 MHz |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 50ns, 30ns |
| Number of Outputs | 2 Output |
| Output Current | 650 mA |
| Number of Positions | 8 Position |
| Power Dissipation | 750 mW |
| Rise Time | 50 ns |
| Fall Time | 30 ns |
| Fall Time (Max) | 30 ns |
| Fall Time (Max) | 50 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -45 ℃ |
| Power Dissipation (Max) | 750 mW |
| Supply Voltage | 17 V |
| Supply Voltage (Max) | 17 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -45℃ ~ 125℃ (TJ) |
Description
●The L6387E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
●Features
●■ High voltage rail up to 600V
●■ dV/dt immunity ±50V/nsec in full temperature range
●■ Driver current capability:
●– 400mA source,
●– 650mA sink
●■ Switching times 50/30 nsec rise/fall with 1nF load
●■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
●■ Internal bootstrap diode
●■ Outputs in phase with inputs
●■ Interlocking function
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