The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
● Advantages
● Replace Expensive Hybrid and Module FET
●Op Amps
● Rugged JFETs Allow Blow-Out Free Handling
●Compared With MOSFET Input Devices
● Excellent for Low Noise Applications Using
●Either High or Low Source ImpedanceVery
●Low 1/f Corner
● Offset Adjust Does Not Degrade Drift or
●Common-Mode Rejection as in Most
●Monolithic Amplifiers
● New Output Stage Allows Use of Large
●Capacitive Loads (5,000 pF) Without Stability
●Problems
● Internal Compensation and Large Differential
●Input Voltage Capability
● Common Features
● Low Input Bias Current: 30 pA
● Low Input Offset Current: 3 pA
● High Input Impedance: 1012 Ω
● Low Input Noise Current: 0.01 pA/√Hz
● High Common-Mode Rejection Ratio: 100 dB
● Large DC Voltage Gain: 106 dB
● Uncommon Features
● Extremely Fast Settling Time to 0.01%:
● 4 µs for the LFx55 devices
● 1.5 µs for the LFx56
● 1.5 µs for the LFx57 (AV = 5)
● Fast Slew Rate:
● 5 V/µs for the LFx55
● 12 V/µs for the LFx56
● 50 V/µs for the LFx57 (AV = 5)
● Wide Gain Bandwidth:
● 2.5 MHz for the LFx55 devices
● 5 MHz for the LFx56
● 20 MHz for the LFx57 (AV = 5)
● Low Input Noise Voltage:
● 20 nV/√Hz for the LFx55
● 12 nV/√Hz for the LFx56
● 12 nV/√Hz for the LFx57 (AV = 5)
