| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 5.00 V |
| Case/Package | TO-99-8 |
| Output Current | 40mA @15V |
| Supply Current | 1 mA |
| Number of Circuits | 2 Circuit |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 0.55 W |
| Common Mode Rejection Ratio | 70 dB |
| Input Offset Drift | 7.00 µV/K |
| Bandwidth | 1 MHz |
| Slew Rate | 500 mV/μs |
| Gain Bandwidth Product | 1 MHz |
| Input Offset Voltage | 2 mV |
| Input Bias Current | 45 nA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 1 MHz |
| Power Dissipation (Max) | 550 mW |
| Minimum CMRR Range | 70 dB |
| Supply Voltage | 3V ~ 32V |
| Supply Voltage (Max) | 32 V |
| Supply Voltage (Min) | 3 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 125℃ |
The LM158H is a low power dual Operational Amplifier designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. Application areas include transducer amplifiers, DC gain blocks and all the conventional op-amp circuits which now can be more easily implemented in single power supply systems. For example, the LM158 series can be directly operated off of the standard 3.3V power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional ±15V power supplies.
● Internally frequency compensated for unity gain
● 2mV Maximum input offset voltage
● Input common-mode voltage range includes ground
● Differential input voltage range equal to the power supply voltage
● Large output voltage swing
● Military rated
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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