TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 kHz |
Number of Pins | 5 Pin |
Supply Voltage (DC) | 40.0V (max) |
Case/Package | TO-263-5 |
Number of Outputs | 1 Output |
Output Voltage | 12 V |
Output Current | 3 A |
Number of Positions | 5 Position |
Number of Regulated Outputs | 1 Output |
Switching Frequency | 173 kHz |
Topology | Buck |
Input Voltage (Max) | 40 V |
Input Voltage (Min) | 4.5 V |
Output Voltage (Min) | 12 V |
Output Current (Max) | 3 A |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage (Max) | 40 V |
Supply Voltage (Min) | 4.5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Operating Temperature | -40℃ ~ 125℃ (TJ) |
The LM2596S-12 is a SIMPLE SWITCHER® low component count Step-down Regulator capable of driving a 3A load with excellent line and load regulation. This regulator is available in fixed output voltages of 12V and requiring a minimum number of external components, this regulator is simple to use and include internal frequency compensation and a fixed-frequency oscillator. The LM2596 series operates at a switching frequency of 150kHz thus allowing smaller sized filter components than what would be needed with lower frequency switching regulators. A standard series of inductors are available from several different manufacturers optimized for use with the regulator. This feature greatly simplifies the design of switch-mode power supplies. Other features include an ensured ±4% tolerance on output voltage under specified input voltage and output load conditions and ±15% on the oscillator frequency.
● Requires only 4 external components
● Excellent line and load regulation specifications
● TTL shutdown capability
● High efficiency
● Uses readily available standard inductors
● Thermal shutdown and current limit protection
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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