TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 260 kHz |
Number of Pins | 7 Pin |
Supply Voltage (DC) | 40.0V (max) |
Case/Package | TO-263-8 |
Number of Outputs | 1 Output |
Output Voltage | 5 V |
Output Current | 5 A |
Number of Channels | 1 Channel |
Number of Positions | 7 Position |
Quiescent Current | 4.20 mA |
Number of Regulated Outputs | 1 Output |
Switching Frequency | 260 kHz |
Topology | Buck |
Input Voltage (Max) | 40 V |
Input Voltage (Min) | 8 V |
Output Voltage (Min) | 5 V |
Output Current (Max) | 5 A |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage | 8 V |
Input Voltage | 8.40 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 10.16 mm |
Size-Width | 8.64 mm |
Size-Height | 4.57 mm |
Operating Temperature | -40℃ ~ 125℃ (TJ) |
The LM2678S-5.0/NOPB is a SIMPLE SWITCHER® high efficiency 5A Step-down Voltage Regulator, monolithic integrated circuit provides all of the active functions for a step-down (buck) switching regulator capable of driving up to 5A loads with excellent line and load regulation characteristics. High efficiency (>90%) is obtained through the use of a low ON-resistance DMOS power switch. The SIMPLE SWITCHER concept provides for a complete design using a minimum number of external components. A high fixed frequency oscillator (260kHz) allows the use of physically smaller sized components. A family of standard inductors for use with the LM2678 are available from several manufacturers to greatly simplify the design process.
● Efficiency up to 92%
● Simple and easy to design (using off-the-shelf external components)
● 120mR DMOS Output switch
● 50µA Standby current when switched OFF
● ±2% Maximum output tolerance over full line and load conditions
● 260kHz Fixed frequency internal oscillator
●Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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