| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 660 kHz |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Outputs | 1 Output |
| Output Voltage | 0.8V ~ 18V |
| Output Current | 1 A |
| Number of Positions | 6 Position |
| Quiescent Current | 2.10 mA |
| Number of Regulated Outputs | 1 Output |
| Switching Frequency | 550 kHz |
| Topology | Buck |
| Input Voltage (Max) | 20 V |
| Input Voltage (Min) | 3 V |
| Output Voltage (Max) | 18 V |
| Output Voltage (Min) | 800 mV |
| Output Current (Max) | 1 A |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 3 V |
| Input Voltage | 3V ~ 20V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 125℃ |
The LM2734YMK is a Step-down DC-DC Regulator provides all the active functions to provide local DC-DC conversion with fast transient response and accurate regulation in the smallest possible PCB area. With a minimum of external components and online design support through WEBENCH and ability to drive 1A loads with an internal 300mR NMOS switch using state-of-the-art 0.5µm BiCMOS technology results in the best power density available. The world-class control circuitry allows for on-times as low as 13ns, thus supporting exceptionally high-frequency conversion over the entire 3V to 20V input operating range down to the minimum output voltage of 0.8V. This regulator uses current-mode control and internal compensation to provide high-performance regulation over a wide range of operating conditions. Additional features include internal soft-start circuitry to reduce inrush current, pulse-by-pulse current limit, thermal shutdown and output overvoltage protection.
● 300mR NMOS switch
● Internal soft-start
● Current-mode, PWM operation
● WEBENCH online design tool
● Thermal shutdown
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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