TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Supply Voltage (DC) | 26.0V (max) |
Current Rating | 1.00 A |
Case/Package | TO-263-4 |
Number of Outputs | 1 Output |
Input Voltage (DC) | 26.0V (max) |
Output Voltage | 5 V |
Output Current | 1 A |
Supply Current | 10mA ~ 15mA |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Quiescent Current | 10 mA |
Output Capacitor Type | Tantalum |
voltage rating | 500 mV |
Number of Regulated Outputs | 1 Output |
Input Voltage (Max) | 26 V |
Input Voltage (Min) | 6.25 V |
Output Voltage (Min) | 5 V |
Output Current (Max) | 1 A |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Input Voltage | 6.25V ~ 26V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.16 mm |
Size-Width | 8.64 mm |
Size-Height | 4.57 mm |
Operating Temperature | -40℃ ~ 125℃ |
The LM2940S-5.0/NOPB is a low dropout Positive Voltage Regulator features the ability to source 1A of output current with a dropout voltage of typically 5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the ground current when the differential between the input voltage and the output voltage exceeds approximately 3V. The quiescent current with 1A of output current and an input-output differential of 5V is therefore only 30mA. Higher quiescent currents only exist when the regulator is in the dropout mode (VIN-VOUT<= 3V). This voltage regulator is designed also for vehicular applications, with the regulated circuitry this regulator protects from reverse battery installations or 2-battery jumps.
● Output voltage trimmed before assembly
● Reverse battery protection
● Internal short-circuit current limit
● Mirror image insertion protection
● P+ Product enhancement tested
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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