LM5101AM Datasheet PDF - TI

The LM5101AM is a 3A high voltage high-side and low-side Gate Driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The "A" versions provide a full 3A of gate drive. The outputs are independently controlled with CMOS input thresholds or TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.

● Drives both a high-side and low-side N-channel MOSFETs

● Independent high and low driver logic inputs

● Up to 118VDC bootstrap supply voltage

● Drives 1000pF load with 8ns rise and fall times

● Excellent propagation delay matching

● Supply rail under-voltage lockout

● Low power consumption

●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.