TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 9.00V (min) |
Case/Package | SOIC-8 |
Rise/Fall Time | 600 ns |
Number of Outputs | 2 Output |
Output Voltage | 118 V |
Output Current | 1.8 A |
Number of Positions | 8 Position |
Quiescent Current | 400 µA |
Rise Time | 600 ns |
Fall Time | 600 ns |
Fall Time (Max) | 600 ns |
Fall Time (Max) | 600 ns |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage | 9V ~ 14V |
Supply Voltage (Max) | 14 V |
Supply Voltage (Min) | 9 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.45 mm |
Operating Temperature | -40℃ ~ 125℃ |
The LM5104M is a high voltage half-bridge Gate Driver with adaptive delay, designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.
● Drives both a high-side and low-side N-channel MOSFET
● Adaptive rising and falling edges with programmable
● Additional delay
● Single input control
● 25ns Typical fast turnoff propagation delay
● Supply rail under-voltage lockout
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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High Voltage Half-Bridge Gate Driver with Adaptive Delay
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