| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 8.00V (min) |
| Case/Package | WDFN-8 |
| Rise/Fall Time | 15 ns |
| Number of Outputs | 2 Output |
| Number of Positions | 8 Position |
| Quiescent Current | 200 µA |
| Rise Time | 15 ns |
| Fall Time | 15 ns |
| Fall Time (Max) | 15 ns |
| Fall Time (Max) | 15 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 8V ~ 14V |
| Supply Voltage (Max) | 14 V |
| Supply Voltage (Min) | 8 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 4 mm |
| Size-Width | 4 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The LM5109BSD/NOPB is a half-bridge high-voltage Gate Driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.
● Drives both a high-side and low-side N-channel MOSFET
● Inputs compatible with independent TTL and CMOS
● Supply rail under-voltage lockout protection
● Low power consumption
● Drives 1000pF load with 15ns rise and fall time
● 108VDC Bootstrap supply voltage
● 2ns Typical excellent propagation delay matching
● Green product and no Sb/Br
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