| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | WSON-10 |
| Rise/Fall Time | 7ns, 3.5ns |
| Number of Outputs | 2 Output |
| Output Current | 5 A |
| Rise Time | 7 ns |
| Fall Time | 3.5 ns |
| Fall Time (Max) | 3.5 ns |
| Fall Time (Max) | 7 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 4.5V ~ 5.5V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Pre-Release |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 125℃ (TJ) |
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
●In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
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