TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 5.00 V |
Case/Package | SOIC-8 |
Output Current | ≤20 mA |
Supply Current | 720 µA |
Number of Circuits | 1 Circuit |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Power Dissipation | 350 mW |
Common Mode Rejection Ratio | 70 dB |
Input Offset Drift | 2.00 µV/K |
Bandwidth | 4 MHz |
Slew Rate | 1.25 V/μs |
Gain Bandwidth Product | 4 MHz |
Input Offset Voltage | 40 µV |
Input Bias Current | 103 nA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Gain Bandwidth | 4 MHz |
Power Dissipation (Max) | 350 mW |
Minimum CMRR Range | 70 dB |
Supply Voltage | 2.2V ~ 30V |
Supply Voltage (Max) | 32 V |
Supply Voltage (Min) | 1.8 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.45 mm |
Operating Temperature | -40℃ ~ 85℃ |
The LM7301IM is a rail-to-rail input-output Operational Amplifier offers greater than rail-to-rail input range, full rail-to-rail output swing, large capacitive load driving ability and low distortion. With only 0.6mA supply current, the 4MHz gain-bandwidth of this device supports new portable applications where higher power devices unacceptably drain battery life. The LM7301 can be driven by voltages that exceed both power supply rails, thus eliminating concerns over exceeding the common-mode voltage range. The rail-to-rail output swing capability provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. Operating on supplies of 1.8 to 32V, the amplifier is excellent for a very wide range of applications in low power systems. Placing the amplifier right at the signal source reduces board size and simplifies signal routing and fits easily on low profile PCMCIA cards.
● 0.6mA Low supply current
● 104dB High PSRR
● 93dB High CMRR
● 97dB Excellent gain
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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