| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 35.0V (max) |
| Current Rating | 100 mA |
| Case/Package | SOIC-8 |
| Number of Outputs | 1 Output |
| Output Voltage | 15 V |
| Output Current | 100 mA |
| Number of Positions | 8 Position |
| Power Dissipation | 750 mW |
| Quiescent Current | 5 mA |
| voltage rating | 1.60 V |
| Number of Regulated Outputs | 1 Output |
| Input Voltage (Max) | 35 V |
| Input Voltage (Min) | 16.7 V |
| Output Current (Max) | 0.1 A |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 750 mW |
| Accuracy | ±5 % |
| Input Voltage | 16.7V ~ 35V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | 0℃ ~ 125℃ |
The LM78L15ACM is a 3-terminal Positive Regulator available with several fixed output voltages making them useful in a wide range of applications. When used as a Zener diode/resistor combination replacement, the LM78LXX usually results in an effective output impedance improvement of two orders of magnitude and lower quiescent current. This regulator can provide local on card regulation, eliminating the distribution problems associated with single point regulation. With adequate heat sinking the regulator can deliver 100mA output current. Current limiting is included to limit the peak output current to a safe value. Safe area protection for the output transistors is provided to limit internal power dissipation. If internal power dissipation becomes too high for the heat sinking provided, the thermal shutdown circuit takes over preventing the IC from overheating.
● Output voltage tolerances of ±5% over the temperature range
● Internal thermal overload protection
● Output transistor safe area protection
● Internal short-circuit current limit
● No external components
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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