| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89-3 |
| Power Rating | 1.6 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 850 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 0.03A |
| Rise Time | 450 ns |
| Input Capacitance (Ciss) | 7.5pF @25V(Vds) |
| Input Power (Max) | 1.6 W |
| Fall Time | 1300 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The LND150N8-G is a N-channel depletion-mode DMOS FET utilizing Supertex"s lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
● Free from secondary breakdown
● Low power drive requirement
● Ease of paralleling
● Excellent thermal stability
● Integral source-drain diode
● High input impedance and low CISS
Microchip
7 Pages / 0.58 MByte
Microchip
8 Pages / 0.6 MByte
Microchip
16 Pages / 0.94 MByte
Microchip
2 Pages / 0.1 MByte
Supertex
Trans MOSFET N-CH 500V 0.03A 4Pin(3+Tab) SOT-89
Supertex
Trans MOSFET N-CH 500V 0.03A 4Pin(3+Tab) SOT-89
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