| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 5.00 V |
| Case/Package | DIP-8 |
| Supply Current | 2.4 mA |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Common Mode Rejection Ratio | 110 dB |
| Bandwidth | 180 kHz |
| Slew Rate | 3.00 V/μs |
| Gain Bandwidth Product | 18.0 kHz |
| Input Offset Voltage | 10 µV |
| Input Bias Current | 2.5 pA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Gain Bandwidth | 18 kHz |
| Minimum CMRR Range | 90 dB |
| Supply Voltage (Max) | 15V ~ 18V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Each |
| Size-Length | 10.16 mm |
| Size-Width | 6.48 mm |
| Size-Height | 3.3 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The LTC1100CN8#PBF is a high precision Instrumentation Amplifier using zero-drift techniques to achieve outstanding DC performance. The input DC offset is typically 1µV while the DC offset drift is typically 5nV/°C, a very low bias current of 65pA is also achieved. The LTC1100 is self-contained, that is, it achieves a differential gain of 100 without any external gain setting resistor or trim pot. The gain linearity is 20ppm and the gain drift is 4ppm/°C. The LTC1100 operates from a single 5V supply up to ±8V. The output typically swings 300mV from its power supply rails with a 10k load. The LTC1100 is manufactured using Linear Technology"s enhanced LTCMOSTM silicon gate process.
● 100nV/°C Maximum offset voltage drift
● 65pA Maximum bias current
● 65pA Maximum offset current
● 20ppm Maximum gain nonlinearity
● ±0.075% Maximum gain error
● 90dB CMRR
● 5V Single supply operation
Linear Technology
1 Pages / 0.71 MByte
Linear Technology
1 Pages / 0.13 MByte
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