| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 18.0V (max) |
| Case/Package | SOIC-8 |
| Number of Outputs | 2 Output |
| Output Voltage | 46 V |
| Output Current | 50 mA |
| Number of Positions | 8 Position |
| Output Voltage (Max) | 46 V |
| Output Current (Max) | 0.05 A |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Supply Voltage | 4.5V ~ 18V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Each |
| Operating Temperature | 0℃ ~ 70℃ (TA) |
The LTC1155CS8#PBF is a dual high-side Gate Driver allows using N-channel FETs for high-side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micro-power operation with 8µA standby current and 85µA operating current allows use in virtually all systems with maximum efficiency. Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. The LTC1155 operates off of a 4.5 to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micro-power sleep operation is required.
● Short-circuit protection
● Controlled switching ON and OFF times
● No external charge pump components
● Replaces P-channel high-side MOSFETs
● Compatible with standard logic families
● Fully enhances N-channel power MOSFETs
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