| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 7.20V (min) |
| Case/Package | MSOP-8 |
| Rise/Fall Time | 8ns, 5ns |
| Number of Outputs | 1 Output |
| Output Voltage | 700 mV |
| Output Current | 2.50 A |
| Number of Positions | 8 Position |
| Rise Time | 8.00 ns |
| Fall Time (Max) | 50 ns |
| Fall Time (Max) | 80 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 7.2V ~ 13.5V |
| Supply Voltage (Max) | 13.5 V |
| Supply Voltage (Min) | 7.2 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 3 mm |
| Size-Width | 3 mm |
| Size-Height | 0.86 mm |
| Operating Temperature | -40℃ ~ 125℃ (TJ) |
The LTC4444EMS8E#PBF is a high frequency high voltage Gate Driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance. The LTC4444 is configured for two supply-independent inputs. The high-side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. It contains under-voltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.
● Adaptive shoot-through protection
● Under-voltage lockout
● 2.5A Peak TG pull-up current
● 3A Peak BG pull-up current
● 1.2R TG Driver pull-down
● 0.55R BG driver pull-down
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