TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | CFDIPW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
DESCRIPTION
●The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
●■ FAST ACCESS TIME: 200ns
●■ EXTENDED TEMPERATURE RANGE
●■ SINGLE 5V SUPPLY VOLTAGE
●■ LOW STANDBY CURRENT: 40mA max
●■ TTL COMPATIBLE DURING READ and PROGRAM
●■ FAST PROGRAMMING ALGORITHM
●■ ELECTRONIC SIGNATURE
●■ PROGRAMMING VOLTAGE: 12V
ST Microelectronics
11 Pages / 0.08 MByte
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512Kbit (64KB x 8) UV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.