M95256-RDW6TG Datasheet PDF - ST Microelectronics

SUMMARY DESCRIPTION

●These electrically erasable programmable memory (EEPROM) devices are accessed by a high

●speed SPI-compatible bus. The memory array is organized as 32768 x 8 bit (M95256) and 16384 x 8 bit (M95128).

●FEATURES SUMMARY

●■ Compatible with SPI Bus Serial Interface (Positive Clock SPI Modes)

●■ Single Supply Voltage:

●– 4.5 to 5.5V for M95xxx

●– 2.5 to 5.5V for M95xxx-W

●– 1.8 to 5.5V for M95xxx-R

●■ High Speed

●– 10MHz Clock Rate, 5ms Write Time

●■ Status Register

●■ Hardware Protection of the Status Register

●■ BYTE and PAGE WRITE (up to 64 Bytes)

●■ Self-Timed Programming Cycle

●■ Adjustable Size Read-Only EEPROM Area

●■ Enhanced ESD Protection

●■ More than 100000 Erase/Write Cycles

●■ More than 40-Year Data Retention