GENERAL DESCRIPTION
●The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.
●FEATURES
● Low VOS (VBE match): 40 µV typical, 100 µV maximum
● Low TCVOS: 0.5 µV/°C maximum
● High hFE: 500 minimum
● Excellent hFE linearity from 10 nA to 10 mA
● Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
● High breakdown: 45 V min
●APPLICATIONS
● Weigh scales
● Low noise, op amp, front end
● Current mirror and current sink/source
● Low noise instrumentation amplifiers
● Voltage controlled attenuators
● Log amplifiers
