| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 2.70V (min) |
| Case/Package | SOP-8 |
| Number of Positions | 8 Position |
| Access Time | 900 ns |
| Memory Size | 16000 B |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.7V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.7 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Each |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The MB85RC128PNF-G-JNE1 is a 128kB I²C Ferroelectric Random Access Memory (FRAM) stand-alone chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RC128 adopts the 2-wire serial interface. Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at least 10¹⁰ cycles, significantly out performing flash memory and E²PROM in the number. The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash memory nor E²PROM.
● Operating frequency - 400kHz maximum
● 2-wire serial interface
● Operating power supply voltage - 2.7 to 3.6V
● Low power consumption
● Data retention - 10 years
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