| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 3.00V (min) |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Access Time | 550 ns |
| Memory Size | 2000 B |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 3V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 3 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Each |
| Size-Length | 5.05 mm |
| Size-Width | 3.9 mm |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The MB85RC16VPNF-G-JNE1 is a 16kB I²C Ferroelectric Random Access Memory (FRAM) chip in a configuration of 2048 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 10¹⁰ Read/Write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike flash memory and E²PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
● Operating frequency - 400kHz maximum
● 2-wire serial interface
● Operating power supply voltage - 3 to 5.5V
● Low power consumption
● Data retention - 10 years
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