| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 3.00V (min) |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Memory Size | 32000 B |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 3V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 3 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Each |
| Operating Temperature | -40℃ ~ 85℃ |
The MB85RS256APNF-G-JNE1 is a 256K (32K x 8-bit) SPI FRAM Chip in a configuration of 32768 words x 8-bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells. The chip is able to retain data without using a data backup battery, as is needed for SRAM. The memory cells used in the chip can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM. The chip does not take long time to write data unlike flash memories nor E2PROM and this takes no wait time.
● Serial peripheral interface
● 25MHz Maximum operating frequency
● 10 Billion read/writes high endurance
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