. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
●epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,
●high- frequency inverters, free wheeling diodes, and polarity protection diodes.
●• Low Reverse Current
●• Low Stored Charge, Majority Carrier Conduction
●• Low Power Loss/High Efficiency
●• Highly Stable Oxide Passivated Junction
●• Guard-Ring for Stress Protection
●• Low Forward Voltage
●• 150°C Operating Junction Temperature
●• High Surge Capacity
●Mechanical Characteristics:
●• Case: Epoxy, Molded
●• Weight: 0.4 gram (approximately)
●• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
●• Shipped in plastic bags, 1000 per bag
●• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number
●• Polarity: Cathode Indicated by Polarity Band
●• Marking: B1100
