TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.00 A |
Case/Package | DO-216AA |
Halogen Free Status | Halogen Free |
Output Current | ≤1.00 A |
Number of Positions | 2 Position |
Forward Voltage | 530mV @1A |
Polarity | Standard |
Thermal Resistance | 23℃/W (RθJL) |
Forward Current | 1 A |
Max Forward Surge Current (Ifsm) | 50 A |
Maximum Forward Voltage (Max) | 530 mV |
Forward Current (Max) | 1 A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.05 mm |
Size-Width | 1.15 mm |
Size-Height | 2.18 mm |
Operating Temperature | -65℃ ~ 150℃ |
The MBRM120ET3G is a surface-mount Schottky Power Rectifier with moulded epoxy case. The Schottky POWERMITE® employs the Schottky barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current trade-off. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface-mount Rectifier. With its unique heat-sink design, the POWERMITE® has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles, 1.1mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products. Typical applications are AC-DC and DC-DC converters, reverse battery protection and O-ring of multiple supply voltages and any other application where performance and size are critical.
● Low-profile
● Low VF provides higher-efficiency and extends battery life
● Low thermal resistance with direct thermal path of die on exposed cathode heat-sink
● AEC-Q101 Qualified and PPAP Capable
ON Semiconductor
7 Pages / 0.16 MByte
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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA,
ON Semiconductor
ON Semi MBRM120ET3G, SMT Schottky Diode, 20V 1A, 2Pin Powermite
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