TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 250 MHz |
Number of Pins | 6 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -200 mA |
Case/Package | SC-70-6 |
Power Rating | 150 mW |
Halogen Free Status | Halogen Free |
Number of Positions | 6 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 150 mW |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.2A |
hFE Min | 100 @10mA, 1V |
Input Power (Max) | 150 mW |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP MBT3906DW1T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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