TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 700 MHz |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 200 mA |
Case/Package | SC-70-6 |
Number of Positions | 6 Position |
Polarity | NPN |
Power Dissipation | 150 mW |
Gain Bandwidth Product | 700 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.2A |
hFE Min | 500 @100µA, 5V |
Input Power (Max) | 150 mW |
DC Current Gain (hFE) | 500 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use this versatile NPN MBT6429DW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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