| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 6.10V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 36ns, 32ns |
| Halogen Free Status | Halogen Free |
| Number of Outputs | 2 Output |
| Number of Positions | 8 Position |
| Power Dissipation | 560 mW |
| Rise Time | 36 ns |
| Output Current (Max) | 1.5 A |
| Fall Time | 32 ns |
| Fall Time (Max) | 32 ns |
| Fall Time (Max) | 36 ns |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Power Dissipation (Max) | 560 mW |
| Supply Voltage | 6.1V ~ 18V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 6.1 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 0℃ ~ 150℃ (TJ) |
Switch between states in a high power transistor by using this MC34152DR2G power driver developed by ON Semiconductor. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
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