| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Case/Package | DIP-8 |
| Rise/Fall Time | 2.4 µs |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Forward Voltage | 1 V |
| Power Dissipation | 400 mW |
| Rise Time | 2.4 µs |
| Isolation Voltage | 5000 Vrms |
| Forward Current | 60 mA |
| Output Voltage (Max) | 55 V |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 60 mA |
| Fall Time | 2.4 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Operating Temperature | -55℃ ~ 100℃ |
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
●Features
●---
● |
● Two isolated channels per package
● Two packages fit into a 16 lead DIP pocket
● Underwriters Laboratory (U.L.) recognized File E90700
● VDE approved for IEC60747-5-2
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