| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 40000 mW |
| Breakdown Voltage (Collector to Emitter) | 700 V |
| Continuous Collector Current | 10mA |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Thanks to STMicroelectronics, easily integrate NPN MD1803DFP digital transistors into digital signal processing circuits. This transistor"s maximum base emitter saturation voltage is 1.2@1.25A@5A V. This product"s maximum continuous DC collector current is 10 mA, while its minimum DC current gain is 5.5@5A@5 V. It has a maximum collector emitter saturation voltage of 2@1.25A@5A V. It has a maximum collector emitter voltage of 700 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ST Microelectronics
10 Pages / 0.2 MByte
ST Microelectronics
ISOWATT218FX NPN 700V 10A
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