| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Rating | 62 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 62 W |
| Isolation Voltage | 2.5 kV |
| Breakdown Voltage (Collector to Emitter) | 700 V |
| Continuous Collector Current | 14A |
| hFE Min | 6 @7A, 5V |
| Input Power (Max) | 62 W |
| DC Current Gain (hFE) | 28 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 62000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.7 mm |
| Size-Width | 5.7 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | 150℃ (TJ) |
The MD2310FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● State-of-the-art technology - Diffused collector enhanced generation
● Stable performances versus operating temperature variation
● Low base-drive requirements
● Tight hFE range at operating collector current
● Fully insulated
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
10 Pages / 0.22 MByte
ST Microelectronics
2 Pages / 0.1 MByte
ST Microelectronics
ISOWATT218FX NPN 700V 14A
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