GENERAL DESCRIPTION
●The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input
●and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
●ABSOLUTE MAXIMUM RATINGS
●Maximum Power Dissipation
●Device Dissipation @ 25°C1 8750 W
●Maximum Voltage and Current
●Collector to Base Voltage (BVces) 65 V
●Emitter to Base Voltage (BVebo) 4.5 V
●Collector Current (Ic) 100 A
●Maximum Temperatures
●Storage Temperature -65 to +200 °C
●Operating Junction Temperature +200 °C
