High Power Switching Applications
●Motor Control Applications
●High input impedance
●High speed : tf = 0.3µs (Max)
● @Inductive Load
●Low saturation voltage : VCE (sat) = 3.6V (Max)
●Enhancement-mode
●Includes a complete half bridge in one package.
●The electrodes are isolated from case.
Toshiba
6 Pages / 0.44 MByte
Toshiba
Transistor: IGBT; 1.2kV; 150A; 1.1kW; 2-109C1A
Toshiba
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Toshiba
Trans IGBT Module N-CH 1.2kV 200A 7Pin 2-95A4A
Toshiba
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
Toshiba
GTR Module: Silicon N-Channel IGBT
Toshiba
GTR Module: Silicon N-Channel IGBT
Toshiba
NPN transistor for high power switching and notor control applications
Toshiba
IGBT Power Transistor Modules
Mitsubishi
Trans IGBT Module N-CH 1200V 200A 1250000mW 2-109C4A
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